The simulation to the bccd proves that pisces is suitable for the for the ccd simulation 模擬實(shí)例表明器件模擬軟件pisces完全適用于對(duì)ccd的模擬。
At last , a buried - channel ccd ( bccd ) is simulated by the developed software . the influences of some parameters such as the gate length , the gap width between the gates and the depth of the channel to the performance as charge handling capacity and charge transfer efficiency of the bccd are discussed . and the dark current is also analyzed 最后利用該軟件實(shí)際模擬了電注入的埋溝ccd器件，詳細(xì)討論了柵長(zhǎng)，柵間隙寬度和埋溝深度等參數(shù)對(duì)該結(jié)構(gòu)ccd的電荷容量和轉(zhuǎn)移效率的影響，同時(shí)，還分析了少子壽命對(duì)暗電流的影響。
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