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TranslationMobile

電子親和力
電子親和能
電子親和勢(shì)
電子親合能
電子親合勢(shì)（原子保持其離子電荷的親合勢(shì)）
電子親合物
電子親合性

"electron" in Chinese : n. 【物理學(xué)】電子。 the electron bea ...
"affinity" in Chinese : n. 1.姻親關(guān)系〔cf. consanguinity ...
"affinity electron microscopy" in Chinese : 親和電鏡（術(shù)）[用親和配體包被銅網(wǎng)
"electron affinity detector" in Chinese : 電了親合檢測(cè)器; 電子親合檢測(cè)器
"electron affinity energy" in Chinese : 電子親合能
"electron affinity substance" in Chinese : 電子親和性物質(zhì); 電子親合性物質(zhì)
"electron affinity yield" in Chinese : 電子親和率; 電子親合率
"first electron affinity" in Chinese : 第一電子親和力
"low electron affinity" in Chinese : 低電子親合力
"negative affinity electron emitter" in Chinese : 負(fù)電子親合力電子發(fā)射極
"negative electron affinity" in Chinese : 負(fù)電子親和勢(shì); 負(fù)電子親合力
"negative electron affinity photocathode" in Chinese : 負(fù)電子親和勢(shì)光陰極
"negative electron affinity photoemitter" in Chinese : 負(fù)電子親和力光電發(fā)射體
"positive electron affinity" in Chinese : 正電子親合力
"affinity" in Chinese : n. 1.姻親關(guān)系〔cf. consanguinity〕; 密切關(guān)系。 2 ...

Examples

The electron affinity of cl is only 3. 6ev .
Cl的電子親和能只是36eV。
Ionization energy ( ie ) and electron affinities ( ea ) are expressed as kilojoules per mole
電離能和電子親和性表達(dá)為每千焦耳摩爾。
Electron emission characteristics have been investigated for amorphous diamond films with low or even negative electron affinity
摘要利用陰極電弧法分別在矽基板及鍍有一層釤金屬的矽基板上沉積非晶鉆石。
The combination of negative electron affinity ( nea ) photocathode and micro channel plate ( mcp ) brings the iii image intensifier . because of its high performance , the iii image intensifier has been developed rapidly and used widely in the short several decades after it had been found
負(fù)電子親和勢(shì)( nea )光電陰極和微通道板( mcp )的結(jié)合產(chǎn)生了三代像增強(qiáng)器，由于這類像增強(qiáng)器具有優(yōu)良性能，在發(fā)現(xiàn)后的短短數(shù)十年中獲得了迅猛發(fā)展和廣泛應(yīng)用。
Based on the energy band characteristics of ordinary negative electron affinity emitter gaas , the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented , and the special negative electron affinity emitter gaas was designed
摘要根據(jù)通常負(fù)電子親和勢(shì)二次電子發(fā)射材料砷化鎵的能級(jí)特點(diǎn)，提出延長(zhǎng)負(fù)電子親和勢(shì)二次電子發(fā)射材料砷化鎵的逸出深度的理論設(shè)計(jì)，設(shè)計(jì)出了特殊的負(fù)電子親和勢(shì)二次電子發(fā)射材料砷化鎵。