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higher-field in Chinese

Pronunciation:
How to pronounce "higher-field""higher-field" in a sentence

Translationmobile phoneMobile

  • 較高場

Examples

  • High - field pulsar
    強磁場脈沖星
  • A faint glow enveloping the high - field electrode in a corona discharge , often accompanied by streamers directed toward the low - field electrode
    電暈在電暈放電中在高壓電極出現(xiàn)的一種微弱光輝，常伴隨有朝向低壓電極的電流
  • Experimentally , an interesting six - route ndr characteristic , resulting from the form of split miniband structures and the extension of high - field domain in the superlattice , is observed at room temperature
    實驗的結果顯示，由于此分?迷你帶結構及超晶格結構中高場區(qū)域的擴展，于常溫下可觀察出?道軌跡之多重負微分電阻特性。
  • After formamide intercalation , three proton peaks were detected . the proton peak of the inner surface hydroxyl of the intercalation compound shifts to high - field with 52 . 3 - 2 . 7 , whereas the proton peak of the inner hydroxyl shifts to 5 - 0 . 3 toward low - field
    甲酰胺插層后產生3個質子峰，內羥基質子峰向低場位移至- 0 . 3 ，內表面羥基質子峰向高場位移到2 . 3 2 . 7 。
  • On the other hand , in the four years since the discovery of superconductivity in this compound , the research community has made considerable improvements in critical current density , both in the low - field value and , perhaps more important , in the higher - field values
    另一方面，在發(fā)現(xiàn)這個化合物具有超導性的四年后，不論是在低磁場，或者是在更重要的較高磁場下，這個研究領域的專家已經將臨界電流密度提高了許多。
  • For the requirement of more negative differential resistance ( ndr ) routes , three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition , and high - field domain in the superlattice is formed under sufficiently large operation bias
    為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且于足夠大的操作偏壓下在該超晶格結構中形成?高場區(qū)域。
  • Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
    本文基于gaas等?族化合物半導體的轉移電子理論，結合半絕緣gaas光電導開關中特有的lock - on效應的研究，提出了類似于耿疇(高場疇或偶極疇)的單極電荷疇理論模型，對光電導開關lock - on效應的各種現(xiàn)象給出了理論解釋。
  • In addition , the breakdown and the degeneration of pcss " s are serious problems in the applications . in this dissertation the mode of luminous charge domain is perfected ulteriorly by deeply studying the dynamics characteristic of high - field domain of the trans - electron device with experiment stability of nonlinear pcss
    本文在通過對轉移電子器件偶極疇的動力學特征作了深入分析的基礎上，結合非線性pcss ' s的穩(wěn)定性實驗，對非線性pcss ' s的光激發(fā)電荷疇理論模型作了進一步的完善。
  • In order to investigate the effect of high - field hot - carrier on devices and circuits , the electrical stress experiment is carried out with 1 . 2 n m , 1 . 0 n m and 0 . 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology . by using the fresh and degraded experiment data , bsim2 model parameters are extracted
    為了分析研究高場熱載流子效應對器件和電路特性可靠性的影響，采用自動測試與cad技術相結合的監(jiān)測系統(tǒng)，對國內溝道長度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet進行了電應力退化實驗，并根據(jù)實驗結果提取了退化前后器件的bsim2模型參數(shù)。
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