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TranslationMobile

界面態(tài)
界面狀態(tài)

"interface" in Chinese : n. 分界面，兩個(gè)獨(dú)立體系的相交處。 vt. (-fac ...
"state" in Chinese : n. 1.〔常作 S-〕國(guó)，國(guó)家；〔通例作 S-〕(美國(guó) ...
"fast-interface-state capture" in Chinese : 快速界面態(tài)俘獲
"fast-interface-state loss" in Chinese : 快速界面態(tài)損失
"as-interface" in Chinese : 不能使用濾波器; 模塊時(shí)
"if interface" in Chinese : 交接面
"interface" in Chinese : n. 分界面，兩個(gè)獨(dú)立體系的相交處。 vt. (-faced, -facin ...
"t-interface t" in Chinese : 接口
"in a state" in Chinese : 處于糟糕、混亂或不整潔的狀態(tài)
"in a state of" in Chinese : 處于……的狀態(tài)
"in state" in Chinese : 本州的; 正式地, 莊重地
"on state" in Chinese : 導(dǎo)通狀態(tài); 接通的; 通態(tài)
"state" in Chinese : n. 1.〔常作 S-〕國(guó)，國(guó)家；〔通例作 S-〕(美國(guó)、澳洲的)州；〔th ...
"state‘s will" in Chinese : 國(guó)家意志
"will of the state" in Chinese : 國(guó)家意志

Examples

Gets the user interface state of the element
獲取元素的用戶界面ui狀態(tài)。
Specifies the user interface state of a element within a
控件內(nèi)某元素的用戶界面( ui )狀態(tài)。
Influences of collision angle on the interface state of explosive compound materials
碰撞角對(duì)爆炸復(fù)合材料界面狀態(tài)的影響
Gets or sets a value indicating whether the band is in a selected user interface state
獲取或設(shè)置一個(gè)值，該值指示帶區(qū)是否為被選定。（從
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假設(shè)隧道電子從硅進(jìn)入氧化層和界面態(tài)的建立是輻射效應(yīng)的恢復(fù)機(jī)理。
In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states
然后使用光照條件討論了p和n型sicmos的界面態(tài)的性質(zhì)，即p型為施主態(tài)， n型為受主態(tài)。
It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模擬結(jié)果表明：退火過(guò)程所加?xùn)牌珘旱拇笮∫约八淼离娮有?yīng)與建立的界面態(tài)所占比例的不同影響器件的恢復(fù)率。
The electrical parameters of buried oxide and interface state in soi structures influence the performance , reliability and the radiation hardness of devices fabricated in the superficial silicon film
完成了存儲(chǔ)陣列，控制電路，外圍電路的時(shí)序設(shè)計(jì)，原理圖設(shè)計(jì)，版圖設(shè)計(jì)，并且通過(guò)了drc ， lvs檢查。
A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在輻照的電離效應(yīng)方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對(duì)mos溝道反型層遷移率的影響。
In the high frequency c - v experiments , the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states . the deep interface states were simply studied by using photo excitation
在無(wú)光照條件下，比較了n型和p型sicmos的不同特點(diǎn)，對(duì)其深耗盡特征和p型sicmos的平帶電壓作了討論和解釋。