When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240 , the atomic ratio s / sn of the films increases from 0 . 72 to 1 . 08 and energy gap of the films increases from 1 . 44ev to 1 . 48ev with the increasing of the sulphurisation temperature 當(dāng)硫化時(shí)間為30分鐘硫化溫度在240 ~ 310之間變化時(shí),薄膜的s / sn值隨著硫化溫度的升高從1 . 08上升到1 . 96 ,能帶間隙隨著硫化溫度的升高從1 . 01ev上升到1 . 72ev 。
The results are as follows : as the sputtering pressure increases , the atomic ratio of o to ti increase in the films , which is attributed to the fact that the absolute oxygen content increases , as the pressure increases despite the ratio of 62 to ar remains unchangless 結(jié)果發(fā)現(xiàn):在氧氣、氬氣分壓比不變的條件下,薄膜表面o和ti原子比增大,這可能是由于濺射氣壓增大,而氧氣與氬氣比未變,真空室中氧氣的絕對(duì)含量增加,參加反應(yīng)的氧原子數(shù)增加的緣故造成的。
When the atomic ratio of nb is one , the structure is homogeneous and almost composed of the single sm2fe17 phase . it ' s nearly the same structure as that after annealing . so it can reduce the production cost and increase the stability of magnetic properties 當(dāng)nb的原子比為1時(shí)的鑄態(tài)組織基本為均勻的接近單相的sm _ 2fe _ ( 17 )組織,已接近于退火后的組織,從而可以避免冗長(zhǎng)的均勻化退火化過(guò)程而直接用于制造永磁體,極大的降低了生產(chǎn)成本,并能有效的提高磁性能的穩(wěn)定性。
A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film . a convictive explanation brought forward to illustrate the changing of the electrical ; properties of the ato thin film in different conditions 在溫度較低時(shí)( < 500 ) ,薄膜的方塊電阻隨成膜溫度的升高而降低;當(dāng)基板溫度繼續(xù)升高,薄膜的方塊電阻隨基板溫度的升高而增大,這主要是因?yàn)椴AЩ逯衚 ~ + 、 na ~ +離子向薄膜中的擴(kuò)散。
Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ) . the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering , and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering 用x射線光電子能譜技術(shù)( xps )和角分辨x射線光電子能譜技術(shù)( arxps )研究了薄膜的表面化學(xué)態(tài)以及最頂層原子種類和分布狀況,結(jié)果顯示在熱處理過(guò)程中薄膜表面形成一層富含bao的非計(jì)量鈦氧化物層,并且鋇-鈦原子濃度比隨著探測(cè)深度的增大而逐漸減小。