例句與造句

1. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
   利用亞閾值安伏特性測(cè)定由于氧化空穴和界面態(tài)產(chǎn)生的電離輻射感應(yīng)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管閾電壓偏移分量的標(biāo)準(zhǔn)試驗(yàn)方法
2. In the study , it is further shown that the current follows michaelis - menten kinetics in steady state . using the kcsa k + permeation parameters provided by p . h . nelson [ 1 ] , the current - voltage relationship is proved to be ohmic and the concentration - current relationship are also obtained reasonably
   由此，在平衡狀態(tài)下推出了能斯特( nernst )方程；在穩(wěn)態(tài)條件下，轉(zhuǎn)導(dǎo)電流滿足米氏動(dòng)力學(xué)關(guān)系( michaelis - mentenkinetics ) 。
3. Taking the silicon diode as an example , through an analysis of the diode ' s current - voltage characters and the avometer circuit , the writer finds out the reasons for the differences in the amount when measuring the positive direct current equivalent resistance with different ohm grades
   摘要以硅二極管為例，從二極管的伏安特性及萬(wàn)用表內(nèi)部電路的角度，分析了用指針式萬(wàn)用表的不同歐姆檔位測(cè)量二極管的正向直流等效電阻時(shí)，其值緣何不同。
4. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this , high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule . on the basis of this , we deeply explore method of detector fabrication . and we also studied the level and density of traps in detector . gold , indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1 . 5mm to compare different contact technologies . the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors
   我們利用熔體溫度振蕩法在石英安瓿中將6n的單質(zhì)cd 、 zn 、 te合成多晶原料，用坩鍋旋轉(zhuǎn)下降法在同一安瓿中生長(zhǎng)出尺寸為20 40mm的cd _ ( 1 - x ) zn _ xte晶體。在此基礎(chǔ)上對(duì)碲鋅鎘探測(cè)器的工藝進(jìn)行了較深入的研究，制作了厚1 ? 1 . 5mm的探測(cè)器，測(cè)試了c 、 in 、 au等不同金屬的電極接觸性能，并在國(guó)內(nèi)首次通過(guò)測(cè)試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對(duì)電阻率、陷阱能級(jí)、陷阱濃度進(jìn)行了分析，同時(shí)測(cè)得的~ ( 241 ) am源的能譜。
5. For the first time , the energy band configuration of p - si / n - bn heterojunctions were studied and drawn up . the study of the current - voltage ( i - v ) characteristics showed significant rectifying behavior with reverse saturation current of 3 . 7 x 10 ~ 7a , breakdown voltage of 30v and turn on voltage of 14v . the capacity - voltage ( c - v ) characteristics are studied too
   研究了p - si / n - bn異質(zhì)結(jié)的-特性，測(cè)試表明異質(zhì)結(jié)具有明顯的整流特性，反向飽和電流3 . 7x10 “ ’ a ，擊穿電壓高達(dá)30v導(dǎo)通電壓為14v ，應(yīng)用p七en異質(zhì)結(jié)能帶圖對(duì)其卜v特性做出了定性解釋。
6. It's difficult to find current-voltage in a sentence. 用current-voltage造句挺難的
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