triodes造句
例句與造句
- blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5a 5a and above
5a5a以上環(huán)境或管殼額定逆導三極晶閘管空白詳細規(guī)范 - harmonized system of quality assessment for electronic components; blank detail specification : industrial heating triodes
電子元件質(zhì)量評估協(xié)調(diào)體系.空白詳細規(guī)范.第1002部分 - the fabricated triode flat display possessed better field emission characteristics and larger anode current
所制作的三極結(jié)構(gòu)平板顯示器樣品具有良好的場致發(fā)射特性以及大的陽極電流。 - harmonized system of quality assessment for electronic components . blank detail specification . industrial heating triodes
電子元器件質(zhì)量評估協(xié)調(diào)體系.空白詳細規(guī)范.工業(yè)加熱用三極管 - specification for harmonized system of quality assessment for electronic components-blank detail specification : industrial heating triodes
電子元器件用質(zhì)量評估協(xié)調(diào)體系規(guī)范.空白詳細規(guī)范.工業(yè)用加熱三極管 - It's difficult to find triodes in a sentence. 用triodes造句挺難的
- in addition, the structure of field emission triode and double-gated field emission cathodes are also simulated by another software ( ebs )
其次,采用本實驗室的新型軟件ebs對三極管和雙門聚焦結(jié)構(gòu)的尖錐場發(fā)射陰極的發(fā)射情況進行了模擬。 - semiconductor devices-discrete devices-blank detail specification for bidirectional triode thyristors triacs, ambient and case-rated, for currents greater than 100a
半導體器件分立器件電流大于100a環(huán)境和管殼額定的雙向三極晶閘管空白詳細規(guī)范 - ,100a semiconductor devices; discrete devices; part 6 : thyristors; section 2 : blank detail specification for bidirectional triode thyristors triacs, ambient or case, up to 100 a
半導體器件.分立器件.第6部分:晶體閘流管.第2節(jié):雙向三極晶體閘流 - since the current produced by light activated triode is larger, it is possible to use common microammeter to measure the photocurrent, making the experiment easier
由于光敏三極管的光電流較大，測試光電流時，可用普通的電流表（微安表）進行測量，使實驗變得簡單可行。 - this paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode
摘要利用光敏三極管代替硅光電池和光敏二極管來測試單縫和雙縫衍射的光強分布。 - semiconductor devices discrete devices part 6 : thyristors section two-blank detail specification for bidirectional triode thyristors triacs, ambient or case-rated, up to 100a
半導體器件分立器件第6部分:閘流晶體管第二篇100a以下環(huán)境或管殼額定的雙向三極閘流晶體管空白詳細規(guī)范 - semiconductor devices . discrete devices . part 6 : thyristors . section one-blank detail specification for reverse blocking triode thyristors, ambient or case-rated, up to 100a
半導體器件分立器件第6部分:閘流晶體管第一篇100a以下環(huán)境或管殼額定反向阻斷三極閘流晶體管空白詳細規(guī)范 - semiconductor devices; discrete devices; part 6 : thyristors; section one : blank detail specification for reverse blocking triode thyristors, ambient and case-rated, up to 100 a
半導體器件.分立器件.第6部分:晶閘管.第1節(jié):電流在100a以下的額定環(huán)境和外殼的反向阻斷三極閘流晶體管的空白詳細規(guī)范 - semiconductor devices-discrete devices-part 6 : thyristors-section three-blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100a
半導體器件分立器件第6部分：晶閘管第三篇電流大于100a環(huán)境和管殼額定的反向阻斷三極晶閘管空白詳細規(guī)范 - semiconductor devices; discrete devices; part 6 : thyristors : section 3 : blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 a
半導體器件.分立器件.第6部分:晶體閘流管.第3節(jié):電流在100a以下的額定環(huán)境和外殼的反向阻擋三極閘流晶體管的空白詳細規(guī)范