例句與用法

1. Aluminium gallium indium phosphide , algainp
   磷化鋁銦鎵
2. In this work of part 1 , as a main body of this dissertation , multiple experimental methods are applied to investigate the optical properties of gap1 - xnx alloys with the n composition varying from 0 . 05 % to 3 . 1 % . in part 2 , the transient photoluminescence of iii - v semiconductor gainp and algainp alloys are studied
   隨著與氮有關(guān)的化合物半導(dǎo)體在短波發(fā)光器件(如藍(lán)色發(fā)光二極管和紫色激光器件等)方面的巨大應(yīng)用潛力和發(fā)展， gapn作為一種新型的含氮-族化合物半導(dǎo)體材料，其光電性質(zhì)引起了人們的關(guān)注。
3. The maximum one side output power of uncoated lasers attain to 2w and the minimum threshold current is 120ma . thereafter , algalnp and algaas material system lateral real refractive index waveguided 650nm / 780nm double wavelength multiquantum well lasers for dvd - rom driver and dvd player ' s optical pickup system are simulated and designed on the basis of the experiment of conventional lasers and the former research of tunneling cascade devices
   在此之后，結(jié)合650nm附近波長的常規(guī)algainp gaas多量子阱激光器的實(shí)驗(yàn)結(jié)果與以往隧道級(jí)聯(lián)器件的研究，設(shè)計(jì)并模擬分析了基于algainp材料與algaas材料的可用于dvd - rom驅(qū)動(dòng)器和dvd播放機(jī)光學(xué)讀取系統(tǒng)的側(cè)向?qū)嵳凵渎蕦?dǎo)引隧道級(jí)聯(lián)650nm 780nm雙波長多量子阱激光器。