In this study , the suitable preparation conditions were experimentally determined 通過實(shí)驗(yàn),確定了動(dòng)態(tài)lbl成膜的適宜條件。
Comared with static lbl process , dynamic lbl could shorten preparative duration and simplyfiy the preparative procedure 與靜態(tài)層-層靜電吸附成膜法相比,大大縮短了制膜時(shí)間,簡化了成膜程序。
The a - si : h films have special photoelectric properties , and we analyze the effect of technology conditions of lbl method on the photosensitivity of a - si : h films . there are lots of lbl technology conditions 氫化非晶硅薄膜具有獨(dú)特的光電特性,我們分析了采用lbl方法的制備工藝條件對(duì)氫化非晶硅薄膜的光敏性的影響。
In this paper , the dynamic lbl polyion composite membranes were prepared by depositing polyacrilic acid and polyethyleneimine alternatively on the ultrafiltration support membrane under a certain pressure . the polyion composite membranes were evaluated by the pervaporation separation of water - ethanol mixture 采用動(dòng)態(tài)lbl (動(dòng)態(tài)層-層吸附)成膜方法,以聚丙烯酸為聚陰離子,聚乙烯亞胺為聚陽離子,一定壓力下,在超濾膜上制備聚離子復(fù)合膜。
Through analyzing thin film ’ s photoelectric properties affected by different technology conditions via lbl and chemical anneal methods , we expect to achieve reasonable technology conditions to combine a - si : h ’ s excellent photoelectric properties with microcrystal silicon ’ s high stabilities and to produce a - si : h thin film with a high photosensitivity and low light - induced degradation 通過分析layer - by - layer方法、化學(xué)退火法不同的制備工藝條件對(duì)薄膜光電特性的影響,得到合理化的制備工藝條件,以期將非晶硅優(yōu)良光電特性與微晶硅的高穩(wěn)定性相結(jié)合,從而制備高光敏性和低光致衰退性的非晶硅薄膜。