例句與造句

1. Numerical simulation of current - voltage characteristics in a double barrier system
   雙勢壘系統(tǒng)伏安特性的數(shù)值模擬
2. Current - voltage regulator
   電流電壓調節(jié)器
3. Photovoltaic devices - measurement of photovoltaic current - voltage characteristics
   光電器件.第1部分:光電池電流.電壓特性測量
4. Current - voltage dual
   電流電壓對偶
5. Photovaltaic devices . part 1 : measurement of photovaltic current - voltage characteristics
   光電設備.第1部分:光電電流電壓特性的測量
6. It's difficult to find current-voltage in a sentence. 用current-voltage造句挺難的
7. Photovoltaic devices . part 1 : measurement of photovoltaic current - voltage characteristics
   光伏器件第1部分:光伏電流電壓特性的測量
8. Photovoltaic devices ; part 1 : measurement of photovoltaic current - voltage characteristics
   光電器件.第1部分:光電池電流.電壓性能的測定
9. Effect of structural parameters on current - voltage characteristics in a three - quantum - well superlattice unit
   結構參數(shù)對三量子阱超晶格單元結構伏安特性的影響
10. A notable reversible nonlinear current - voltage conduction behavior was found for the nanocomposites
    該納米復合材料體系同時顯示出明顯的電流?電壓非線性導電行為。
11. Testing of carbon materials - determination of specific electrical resistance by the current - voltage method - solid matters
    碳素材料試驗.電流電壓法測定比電阻.固體
12. Photovoltaic devices - part 1 : measurement of photovoltaic current - voltage characteristics iec 60904 - 1 : 1987 ; german version en 60904 - 1 : 1993
    光電器件.第1部分:光電池電流-電壓性能測量
13. Testing of carbonaceous materials - determination of the electrical resistivity of electrodes according to the current - voltage method ; solid materials
    碳質材料試驗.用電流電壓法測定電極的電阻率.固體材
14. 194 f - standard test method for assessing the current - voltage cycling stability at 90c of absorptive electrochromic coatings on sealed insulating glass units
    密封絕緣玻璃裝置有吸收力的電致變色覆層在90
15. Standard test method for assessing the current - voltage cycling stability at room temperature of absorptive electrochromic coatings on sealed insulating glass units
    密封絕緣玻璃裝置有吸收力的電致變色覆層在室溫下的電流-電壓循環(huán)穩(wěn)定性評估的標準試驗方法
16. High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination
    由于金屬雜質原子擴散并沉積在器件的有源區(qū)，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。
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