gettering造句
例句與造句
- Test method for gettering properties of barium flash getter
蒸散型鋇吸氣劑吸氣性能測試方法 - Test method for gettering properties of non - evaporable getter
非蒸散型吸氣劑吸氣性能測試方法 - The influence of aluminium gettering on the multicrystalline silicon solar cell
鋁吸雜對多晶硅太陽電池的影響 - Test methods of gas absorption characteristic for non - evaporation gettering materials and products
非蒸散型吸氣材料及制品吸氣性能測試方法 - Thus , an optimized gettering process obtained was 800 and following a slow cooling
氦微孔吸除熱處理合適溫度條件是800 ,冷卻條件是慢降溫方式。 - It's difficult to find gettering in a sentence. 用gettering造句挺難的
- Standard practice for determining gettering rate , sorption capacity , and gas content of nonevaporable getters in the molecular flow region
測量分子流動區(qū)域內不揮發(fā)吸收劑的吸收速率吸收能量及氣體含量 - Cavity - gettering was studied by comparing varies of reversed leakage - current jr of above two kinds of diodes before and after thermal process
并與相同工藝條件下單面拋光二極管的實驗結果比較。本實驗分兩個階段進行。 - Recently , a new gettering technique , which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities , has been concentrated
近年來一種新的吸雜技術?氦微孔吸雜技術因其對金屬雜質顯著的吸除效果而備受關注。 - Also , the ncz ( nitrogen doped silicon ) , which is my laboratory research characteristic , is research focus at present because it has strong mechanical strength and advantage intrinsic gettering property
同時微氮硅單晶由于其較強的機械強度和內吸雜能力等優(yōu)點是目前研究的熱點,也是我們實驗室的特色。 - The local pt diffusion is formed by the pt gettering by the hole defection deduced by hydrogen irradiation . the irradiation energy and dose definite the axial position and dose of the local pt diffusion respectively
本課題研究提出了新型的局域鉑摻雜技術和電子輻照技術相結合的壽命控制技術,以期改善frd的綜合性能。 - High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination
由于金屬雜質原子擴散并沉積在器件的有源區(qū),會造成諸如:反向漏電流較大,反向擊穿電壓是軟擊穿等有害的影響。 - The efficiency and the homogeneity of cavities gettering were analyzed by measuring the leakage - current for the diodes in a wafer , which was thermally treated at the optimal condition , that is 700 1hr , then 800 6hr and slow cooling down
第二階段,氦微孔吸雜效果的研究。采用做有二極管的大硅片在700 lhr + 800 6hr + ’漫降溫的熱處理條件下對微孔吸雜的效率、均勻性進行實驗。 - The n / n + and p / p + epitaxial structures , which become popular with the development of coms technology , because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique
Coms工藝中普遍采用n / n ~ + 、 p / p ~ +的外延結構,這種以重摻雜硅片為襯底的外延結構與內吸雜工藝相結合,是解決集成電路中的閂鎖效應和粒子引起的軟失效的有效途徑。 - Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device . one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation
所以需要減小有源區(qū)中金屬雜質的濃度,通常采用吸除的方法把金屬雜質從器件有源區(qū)吸收到有源區(qū)之外預先形成的sink (陷阱)中。 - The samples that annealed at different temperatures and different cooling ways ( fast or slow ) , separately , was compared . the experimental results showed that the temperature and the cooling - way of the gettering process were very important for the gettering efficiency
之后二極管分別進行退火溫度700 6hr 、 800 6hr 、 900 6hr和退火后快、慢降溫方式下j _ r值的比較,結果表明吸除熱處理摘要abstraer溫度對于吸雜效果至關重要。
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