higher-field造句
例句與造句
- High - field pulsar
強磁場脈沖星 - A faint glow enveloping the high - field electrode in a corona discharge , often accompanied by streamers directed toward the low - field electrode
電暈在電暈放電中在高壓電極出現(xiàn)的一種微弱光輝，常伴隨有朝向低壓電極的電流 - Experimentally , an interesting six - route ndr characteristic , resulting from the form of split miniband structures and the extension of high - field domain in the superlattice , is observed at room temperature
實驗的結(jié)果顯示，由于此分?迷你帶結(jié)構(gòu)及超晶格結(jié)構(gòu)中高場區(qū)域的擴(kuò)展，于常溫下可觀察出?道軌跡之多重負(fù)微分電阻特性。 - After formamide intercalation , three proton peaks were detected . the proton peak of the inner surface hydroxyl of the intercalation compound shifts to high - field with 52 . 3 - 2 . 7 , whereas the proton peak of the inner hydroxyl shifts to 5 - 0 . 3 toward low - field
甲酰胺插層后產(chǎn)生3個質(zhì)子峰，內(nèi)羥基質(zhì)子峰向低場位移至- 0 . 3 ，內(nèi)表面羥基質(zhì)子峰向高場位移到2 . 3 2 . 7 。 - On the other hand , in the four years since the discovery of superconductivity in this compound , the research community has made considerable improvements in critical current density , both in the low - field value and , perhaps more important , in the higher - field values
另一方面，在發(fā)現(xiàn)這個化合物具有超導(dǎo)性的四年后，不論是在低磁場，或者是在更重要的較高磁場下，這個研究領(lǐng)域的專家已經(jīng)將臨界電流密度提高了許多。 - It's difficult to find higher-field in a sentence. 用higher-field造句挺難的
- For the requirement of more negative differential resistance ( ndr ) routes , three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition , and high - field domain in the superlattice is formed under sufficiently large operation bias
為獲得?多軌跡的負(fù)微分電阻，本研究組件使用?相當(dāng)薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結(jié)構(gòu)在平帶情況下形成三個分?的?子化能階，且于足夠大的操作偏壓下在該超晶格結(jié)構(gòu)中形成?高場區(qū)域。 - Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
本文基于gaas等?族化合物半導(dǎo)體的轉(zhuǎn)移電子理論，結(jié)合半絕緣gaas光電導(dǎo)開關(guān)中特有的lock - on效應(yīng)的研究，提出了類似于耿疇(高場疇或偶極疇)的單極電荷疇理論模型，對光電導(dǎo)開關(guān)lock - on效應(yīng)的各種現(xiàn)象給出了理論解釋。 - In addition , the breakdown and the degeneration of pcss " s are serious problems in the applications . in this dissertation the mode of luminous charge domain is perfected ulteriorly by deeply studying the dynamics characteristic of high - field domain of the trans - electron device with experiment stability of nonlinear pcss
本文在通過對轉(zhuǎn)移電子器件偶極疇的動力學(xué)特征作了深入分析的基礎(chǔ)上，結(jié)合非線性pcss ' s的穩(wěn)定性實驗，對非線性pcss ' s的光激發(fā)電荷疇理論模型作了進(jìn)一步的完善。 - In order to investigate the effect of high - field hot - carrier on devices and circuits , the electrical stress experiment is carried out with 1 . 2 n m , 1 . 0 n m and 0 . 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology . by using the fresh and degraded experiment data , bsim2 model parameters are extracted
為了分析研究高場熱載流子效應(yīng)對器件和電路特性可靠性的影響，采用自動測試與cad技術(shù)相結(jié)合的監(jiān)測系統(tǒng)，對國內(nèi)溝道長度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet進(jìn)行了電應(yīng)力退化實驗，并根據(jù)實驗結(jié)果提取了退化前后器件的bsim2模型參數(shù)。