mqw造句
例句與造句
- The growth of mqw is summarized
引入了模擬mqw的數(shù)學(xué)模型。 - 7 . the effect of the mqw on the hb - led is analyzed
全面分析多量子阱結(jié)構(gòu)( mqw )在hb - led中的重要作用。 - Mqw have the same effect on hb - led as dh , but better than that
Mqw結(jié)構(gòu)比dh結(jié)構(gòu)更加有效的限制載流子，增加輻射復(fù)合效率。 - Al content will decrease if using mqw even the same emitting wavelength . and it will improve the quality of the crystal
采用mqw結(jié)構(gòu)可以減小相同發(fā)射波長下材料中的鋁組分，從而改善了晶體大的質(zhì)量。 - And emission wavelength depends on ratio of well / barrier width more than number of wells . some useful data has been found through experiments
阱壘寬厚度比a較之mqw的周期數(shù)目n對pl發(fā)光波長的影響更大。 - It's difficult to find mqw in a sentence. 用mqw造句挺難的
- Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有機金屬化學(xué)氣象沉積在藍(lán)寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎(chǔ)的多層量子井發(fā)光二極體結(jié)構(gòu)。 - In this dissertation , a novel m - z high speed modulator is proposed , analyzed , fabricated and measured , employing multiple quantum well ( mqw ) structures and traveling wave ( tw ) electrodes to meet the demand of low voltage and wide bandwidth
本論文采用行波量子阱結(jié)構(gòu)來設(shè)計40ghz的電光調(diào)制器。為實現(xiàn)高帶寬，低驅(qū)動的要求，本論文著重在量子阱的光學(xué)特性和器件的微波特性兩個方面進行了深入的研究。 - Structuring three - level model on basis of two - level model . published before . the circuit model is simulated and some results are gotten by taking account into the same parameters . mqw - ld circuit model designed by grossi is adopted to be illustrated by some solo subcircuits
在已發(fā)表的二層電路模型基礎(chǔ)上提出了三層模型，在所依據(jù)的參數(shù)基本相同的情況下，對模型進行模擬，并對所獲的結(jié)果進行比較討論。 - In order to improve the design of mqw structure and the quality of material , gainp / ( alxga1 - x ) inp mqw have been manufactured and analyzed by photoluminescence and raman . great achievements have been obtained . ( 1 ) the theory of photoluminescence of galnp / algalnp mqw was analyzed
本論文主要通過光致發(fā)光和喇曼兩種檢測方法，對gainp ( al _ xga _ ( 1 - x ) ) inpmqw外延片的光學(xué)性質(zhì)進行深入的理論分析和實驗研究，以達到改善mqw結(jié)構(gòu)設(shè)計和提高材料生長質(zhì)量的目的。 - ( 2 ) several samples of different structure parameters are grown by low - pressure metal - organic chemical vapor deposition ( lp - mocvd ) . it is found that pl peak intensity , full width at half maximum ( fwhm ) and light output intensity are greatly dependent on number of wells . ratio of well / barrier width nearly has no effect on pl peak intensity and fwhm , but has little relation to light output intensity
通過分析pls ，可以及時獲取材料生長和結(jié)構(gòu)設(shè)計的數(shù)據(jù)，對質(zhì)量控制有重要的指導(dǎo)意義； ( 2 )對不同結(jié)構(gòu)的gainp algainp多量子阱樣品進行了光致發(fā)光及出光強度的測量，發(fā)現(xiàn)mqw的周期數(shù)目n對pl峰強度、半峰寬和出光強度的影響最大；阱壘寬厚度比a對pl峰強度和半峰寬的影響較小，但對發(fā)光強度的影響較大。 - The performance of modulators employing mqw is governed by the quantum confined stark effect . in order to simplify the analysis of mqw , we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states . then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator
本論文首先根據(jù)量子限制stark效應(yīng)，發(fā)展了等效寬度思想，提出了把單量子阱結(jié)構(gòu)的有限深勢阱的分析轉(zhuǎn)化為無限深勢阱模型的顯式公式，從而大大簡化了電場下量子阱結(jié)構(gòu)的分析；接著利用轉(zhuǎn)移矩陣，把周期性的量子阱結(jié)構(gòu)簡化為三層結(jié)構(gòu)，得到了實際采用的非對稱三阱結(jié)構(gòu)量子阱的場分布，并討論了量子阱結(jié)構(gòu)的偏振特性。