region n. 1.地方,地域,地帶;地區(qū);行政區(qū),管轄區(qū),區(qū);左近,鄰近;(大氣、海水等的)層,界,境。 2.【解剖學(xué);動物學(xué)】(身體的)局部,部位。 3.(學(xué)問等的)范圍,領(lǐng)域。 4.〔罕用語〕天空。 a fertile region 肥沃地帶。 a desert region 沙漠地帶。 forest regions 森林地帶。 the lower [infernal, nether] regions 地獄。 the middle [lower, upper] region of the air 大氣的中[下、上]層。 the operating region 工作范圍。 in the region of 在…附近,在…的左右(in the region of 45 dollars 四十五美元左右)。
n an N girder N 字桁。 to the nth (power) 【數(shù)學(xué)】到 n 次(冪);到極度,極端。 1.【羅馬數(shù)字】90〔N=90000〕。 2.【化學(xué)】=nitrogen. 3.=North(ern)。 N =nuclear 核的:N-waste 核廢料。
To segment multi - object image , n - region segmentation problem is equivalent to n - 1 two - region segmentation problems that are solved based on the developed simple m - s model . the experiments show that cytoplasm of immune cell is segmented out 實驗結(jié)果表明,與小波- fcm模糊聚類紋理圖像分割方法相比,該方法對雙紋理圖像能取得較好的分割效果,分割出的邊界連續(xù),并且具有較強的抗噪能力。
On the base of the study on si / sige hetero - junction fast switching power diode , two kinds of novel structure of sige / si pin diode are proposed in abstract this paper . the one is the gradual changing doping concentration in the n - region , and the other is sige pin diode with mesa structure 本文在對sige si異質(zhì)結(jié)快速開關(guān)功率二極管的研究基礎(chǔ)上,提出了兩種sige si快速開關(guān)功率二極管的新結(jié)構(gòu): ?基區(qū)漸變摻雜型sige異質(zhì)結(jié)開關(guān)功率二極管和臺面結(jié)構(gòu)sige異質(zhì)結(jié)開關(guān)功率二極管。
On the base of the study on sige material physics characteristic , sige / si hetero - junction characteristic , we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region , and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface 本文針對sige材料的物理特性、 sige si異質(zhì)結(jié)特性建立了準(zhǔn)確的物理參數(shù)模型。在詳細(xì)論述了sige si異質(zhì)結(jié)功率二極管良好特性的基礎(chǔ)上,提出了兩種快速軟恢復(fù)sige si功率二極管新結(jié)構(gòu): n ~ -區(qū)采用多層漸變摻雜和陰極側(cè)采用理想歐姆接觸。