zener中文是什么意思

發(fā)音:

中文翻譯
造句

n.
【無(wú)線電】齊納。

effect, zener 齊納效應(yīng)
zener barrier 齊納防爆柵; 齊納阻擋層
zener breakdown 【無(wú)線電】齊納擊穿。
zener card 齊訥卡片
zener current 【無(wú)線電】齊納電流。
zener diode 【無(wú)線電】齊納二極管，穩(wěn)壓二極管。
zener effect 【無(wú)線電】齊納效應(yīng)。
zener efficiency 齊納效應(yīng)
zener impedance 齊納阻抗
zener model 曾納模式
zener peak 齊納峰
zener region 齊納區(qū); 雪崩區(qū)
zener tunneling 齊納隧道效應(yīng)
zener voltage 【無(wú)線電】齊納電壓。
alloy zener junction 合金齊納結(jié)
doped zener transistor logic 齊納二極管晶體管邏輯
dtl zener diode 齊納二極管晶體管邏輯電路
izm …… maximum zener current 最大齊納電流
landau zener theory 朗道齊納理論
silicon zener voltage regulator 硅齊納穩(wěn)壓器
temperature-compensated zener diode 溫度補(bǔ)償齊納二極管
zd zener diode 鍺二極管
zener avalanche voltage 齊納雪崩電壓
zener breakdown theory 稽納雪崩理論
zenenga raisendon 拉伊森東
zenenga raisedon 拉伊塞東

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例句與用法

Alloy zener junction
合金齊納結(jié)
The flow stress can be described by temperature - compensated strain rate , the so - called zener - hollomon parameter
利用7055鋁合金高溫塑性變形時(shí)穩(wěn)態(tài)流變應(yīng)力、應(yīng)變速率(
The basis topologies for the band - gap , buried zener , and xfet references are shown in figures 1 , 2 , and 3 , respectively
關(guān)于帶隙基準(zhǔn)、掩埋齊納二極管和xfet基準(zhǔn)的基本拓?fù)淙鐖D1 、 2和3所示。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors , buried zener diodes , and junction field - effect transistors
現(xiàn)代電壓基準(zhǔn)建立于使用集成晶體管和帶狀能隙基準(zhǔn)、掩埋齊納二極管和結(jié)場(chǎng)效應(yīng)晶體管。
The double exchange interaction founded by zener in early 1950 ' s , and developed by anderson and de gennes later is a better theory in describing the conductive behavior in the compounds
最后由anderson等人發(fā)展了五十年代初期由zener創(chuàng)立起來(lái)的雙交換作用理論，為解釋龐磁電阻效應(yīng)提供了一條途徑。
We are your specialist for semiconductor diodes and rectifiers : standard to ultrafast recovery , schottky , zener , supressor - diodes , bridge rectifiers , transistors , diacs ; also customized
我們是專門(mén)提供二極管以及整流器，例如:標(biāo)準(zhǔn)到超快速恢復(fù)，肖特極，穩(wěn)壓，雙向觸發(fā)二極管，橋式整流器，轉(zhuǎn)換器等等，可以依照客人要求訂做。
Buried zener - based references are frequently used for 12 - bit , 14 - bit , and higher resolution systems because the performance of the buried zener - based references can be extended by incorporating nonlinear temperature compensation networks into the design
在設(shè)計(jì)中使用非線性溫度補(bǔ)償網(wǎng)絡(luò)，掩埋齊納二極管基準(zhǔn)的性能可以進(jìn)一步提升，因此掩埋齊納二極管基準(zhǔn)經(jīng)常用于12位、 14位和更高分辨率的系統(tǒng)中。
We studied the influence of the interface strain and it shows that the lattice mismatch between substrate and film is the main reason of the above observations . expand strain decreases tm - i with increasing resistivity and compressed strain has the opposite effect . using double exchange model of zener these results can be explained qualitatively
27歐姆厘米，轉(zhuǎn)變溫度是78與154開(kāi)爾文，磁場(chǎng)強(qiáng)度為7t時(shí)，磁阻率為習(xí)3及巧6 x結(jié)合雙交換模型和不同的應(yīng)力作用，逐一解釋了產(chǎn)生差異的緣由，其中我們也討論了具有）取向的la 。
Firstly , i provide a brief review of the previous achievements and investigations on the low - dimensional quantum devices and semiconductor superlattice , in which some principal theories such as bloch oscillations , wannier - stark ladder , zener tunneling and related progress in experiments are introduced
首先綜述了過(guò)去三十年低維量子器件與半導(dǎo)體超晶格的發(fā)展與相關(guān)研究，介紹了bloch振蕩、 wannier - stark臺(tái)階、 zener隧穿等關(guān)鍵理論以及相關(guān)實(shí)驗(yàn)方面的進(jìn)展，并引入簡(jiǎn)化模型：緊束縛模型與單帶模型。
That is the reason that all over the countries have never stopped researching for mask jamming technology of radar . at present , the mask jamming source mainly comes from the thermal noise and zener avalanche noise of semiconductor devices . but the noise ’ s quality isn ’ t stabile because of the differences of semiconductor devices each other and the changes of exterior conditions
目前采用的遮蓋性干擾的噪聲源主要來(lái)自半導(dǎo)體器件本身的熱噪聲或齊納雪崩噪聲,但各器件本身的不一致性和外界條件變化等因素使噪聲輸出質(zhì)量不穩(wěn)定;同時(shí)由于此類信號(hào)不能再生,不利于科學(xué)研究。