flashmemory中文是什么意思

發(fā)音:

中文翻譯
造句

【計算機】快閃內(nèi)存，閃存。

flashmixer 急驟攪拌器快速攪拌器
flashlite 專區(qū)
flashmobs 迅集行動
flashlights 手電筒
flashmovie 閃客之友
flashlightfish 原燈籠魚
flashmv 小狼狗
flashlight with spotlight bulb 聚光泡手電筒
flashmy lovee 英語美文欣賞
flashlight with otlight bulb 聚光泡手電筒

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例句與用法

Following the enhancement of process technology , the feature size of device becomes smaller , which make the density of flash memory and at the same time performance improved
隨著工藝水平的不斷提高，器件特征尺寸不斷減小，從而使得flashmemory在容量不斷增大的同時性能也在不斷的改善。
Flash memory becomes an indispensable kind of products of semiconductor memories for its advantage of high speed . its usages in today ' s computer communication and consumer electronics are wide and more popular
如今flashmemory由于其自身的高速的優(yōu)勢而使得它成為半導(dǎo)體存儲器中不可或缺的一類產(chǎn)品，它在計算機、通訊和消費類電子產(chǎn)品中的應(yīng)用越來越廣泛，越來越普遍。
This article firstly describes the structure and operational principle of a flash memory and analyzes the commonly used structures of its peripheral circuits . . . . . sense amplifier . then emphasizes on illustrating the design of two novel structures of sense amplifier applied in a 3v full - cmos flash memory , and then simulate them using innosis 0 . 15um process technology and obtain satisfying simulation results under different conditions
然后著重論述了兩種應(yīng)用3v全cmosflashmemory中的全新結(jié)構(gòu)靈敏放大器，并用innosis0 . 15 m工藝，對其進行仿真，得到了不同條件下的仿真結(jié)果，結(jié)果表明新設(shè)計的全新靈敏放大器具有電路結(jié)構(gòu)簡單，讀取速度快等優(yōu)點，完全能夠滿足flashmemory的要求，達到了預(yù)期的目標(biāo)。
Furthermore , based on the proposed new charge pump circuit , a iv to 3 . 3v high voltage generator which is used in analog switch circuit and a 3v to 10v high voltage generator which is applied to eeprom or flash memory are designed , the components and design thought of two high voltage generators are also discussed in detail . and the simulations of two high voltage generators are accomplished by tsmc 0 . 18uw cmos technology ( t018u ) , the outcome testifies that two high voltage generators that take the new charge pump as the core circuit have the higher performance
此外，基于新型的電荷泵電路，設(shè)計了用于模擬開關(guān)電路的1v到3 . 3v的高壓產(chǎn)生系統(tǒng)和用于flashmemory的3v到10v的高壓產(chǎn)生系統(tǒng)，詳細討論了兩種高壓產(chǎn)生系統(tǒng)的電路組成和設(shè)計考慮，并用臺積電0 . 18 mcmos工藝( t018u )對兩種高壓產(chǎn)生系統(tǒng)進行了hspice仿真，結(jié)果表明以新型電荷泵電路為核心的兩個高壓產(chǎn)生系統(tǒng)都具有較高的性能。

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