- injection condition
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注入條件的英文
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- Abstract : a hybrid algorithm for solving carrier transport equations ofsemiconductor device is presented in this paper
文摘:針對(duì)半導(dǎo)體器件模擬中載流子方程兩種基本算法在高注入條件下的不足，提出了一種混合算法。 - We can prove theoretically and practically that the hybrid algorithm is superior to couples and de - coupled algorithms in high implantation conditions
經(jīng)過(guò)理論分析和實(shí)際計(jì)算表明：這種算法對(duì)求解高注入條件下的載流子方程是有效的。 - And then , we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks
然后，通過(guò)x射線衍射測(cè)量了樣品的衍射譜，通過(guò)比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結(jié)構(gòu)情況。 - We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在優(yōu)化工藝條件下制備的hfo _ 2介質(zhì)層中，襯底注入條件下由于其較低的體和界面缺陷密度，漏電流的輸運(yùn)機(jī)制主要以schottky發(fā)射為主; silc效應(yīng)導(dǎo)致hfoz / si界面缺陷態(tài)的增加，從而使得襯底注入條件下，柵泄漏電流機(jī)制不僅有schottky發(fā)射還有f一p發(fā)射機(jī)制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )柵介質(zhì)的電學(xué)特征。 - At last , we observed the surface morphology and magnetism of the samples by atomic force microscopy ( afm ) and magnetic force microscopy ( mfm ) , the formation of mnga and mnas magnetic precipitates was discovered and the precipitates were affected by the conditions of implantation and annealing
最后，通過(guò)原子力顯微鏡（ afm ）和磁力顯微鏡（ mfm ）觀察了樣品的表面形貌和磁特性，發(fā)現(xiàn)了退火樣品中形成了磁性第二相mnga或mnas粒子，并且這些磁性粒子的磁特性與注入條件和退火條件有關(guān)。