注入條件的英文

發(fā)音:

英文翻譯
造句

injection condition

注入 pour into; empty into; inpou ...
條件 condition; term; factor
加入條件 add condition; conditions of accession
接入條件 ac access conditions
咬入條件 bite condition
再入條件 reentry conditions
裝入條件 loaded condition
插進(jìn)輸入條件 inserting input condition
插入條件檢查 insert condition checks
貿(mào)易收入條件 income terms of trade
模擬輸入條件 simulated input condition
無效輸入條件 invalid input condition
正常輸入條件 normal input cause
可預(yù)設(shè)輸出入條件 presettable i/o conditions
離子注入機(jī)通用技術(shù)條件 generic specification for ion implantation equipment
注入 pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion 將水注入容器 pour water into a vessel; 長江注入東海。 the changjiang river empties into the east china sea
并入條款 incorporation clause
插入條形碼 insertbarcode
加入條約 accession to a treaty; adhere to the treaty
列入條款 inclusion clause
加入同盟, 加入條約 accession to a treaty
重壓入條料坯料 push-back blank
大注入 large injection
單注入 single injection

"查查詞典"手機(jī)版

千萬人都在用的超大詞匯詞典翻譯APP

例句與用法

Abstract : a hybrid algorithm for solving carrier transport equations ofsemiconductor device is presented in this paper
文摘:針對半導(dǎo)體器件模擬中載流子方程兩種基本算法在高注入條件下的不足，提出了一種混合算法。
We can prove theoretically and practically that the hybrid algorithm is superior to couples and de - coupled algorithms in high implantation conditions
經(jīng)過理論分析和實際計算表明：這種算法對求解高注入條件下的載流子方程是有效的。
And then , we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks
然后，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結(jié)構(gòu)情況。
We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在優(yōu)化工藝條件下制備的hfo _ 2介質(zhì)層中，襯底注入條件下由于其較低的體和界面缺陷密度，漏電流的輸運機(jī)制主要以schottky發(fā)射為主; silc效應(yīng)導(dǎo)致hfoz / si界面缺陷態(tài)的增加，從而使得襯底注入條件下，柵泄漏電流機(jī)制不僅有schottky發(fā)射還有f一p發(fā)射機(jī)制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )柵介質(zhì)的電學(xué)特征。
At last , we observed the surface morphology and magnetism of the samples by atomic force microscopy ( afm ) and magnetic force microscopy ( mfm ) , the formation of mnga and mnas magnetic precipitates was discovered and the precipitates were affected by the conditions of implantation and annealing
最后，通過原子力顯微鏡（ afm ）和磁力顯微鏡（ mfm ）觀察了樣品的表面形貌和磁特性，發(fā)現(xiàn)了退火樣品中形成了磁性第二相mnga或mnas粒子，并且這些磁性粒子的磁特性與注入條件和退火條件有關(guān)。
The work mechanism of the novel laser is introduced , and the math expression of efficiency is given , and the lasing mode and the distribution of the optical field are simulated . it proves that for the novel laser , the inner quantum efficiency is larger than l , and at the same injecting current compared with the normal laser ; the output optical power is higher
介紹了新型隧道級聯(lián)結(jié)構(gòu)激光器的工作機(jī)理，理論推導(dǎo)了新型結(jié)構(gòu)激光器的效率數(shù)學(xué)表達(dá)式，模擬了激光器激射模式及內(nèi)部光場分布，并用實驗證明了新型結(jié)構(gòu)激光器能夠?qū)崿F(xiàn)內(nèi)量子效率大于1 ，且在不高的電流注入條件下獲得了較高的功率輸出。