electromigration造句
例句與造句
- Atoms in the solder joints move as a result of both diffusion and electromigration
另一方面，擴散和電遷移效應，則造成焊點中的原子移動。 - As an electric current passes through , the joule heating and electromigration effects occur in the flip chip solder bumps
當電流通過焊點時，會伴隨產生焦耳熱效應和電遷移效應。 - There are many aspects of power grid integrity analysis , for example , analysis of ir drop and analysis of electromigration
電源網格的完整性分析包含很多方面，如irdrop分析，金屬電遷移等。 - Standard test method for estimating electromigration median time - to - failure and sigma of integrated circuit metallizations metric
集成電路金屬噴鍍總量和電遷移中值失效時間的評定標準試驗方法 - In many issues of the reliability of copper interconnection , we place the emphasis on electromigration and stress migration
在銅互連可靠性的幾個主要問題中，重點針對互連中的電遷徙和應力遷徙進行了探討。 - It's difficult to find electromigration in a sentence. 用electromigration造句挺難的
- Standard guide for design of flat , straight - line test structures for detecting metallization open - circuit or resistance - increase failure due to electromigration metric
檢測由電遷移造成的噴鍍金屬開路或阻力增加失效率用的平板直線試驗結構設計的標準指南 - Based on the theoretical studies , a band - pass filter circuit is optimized in order to decrease current density and increase the electromigration lifetime
在理論研究基礎之上，借助于計算機輔助設計，針對一個帶通濾波器電路進行了電路優(yōu)化，以提高其電遷移壽命。 - Abstract : the diffusion mechanism for the diffusion migration with electromigration together was discussed . the differential equations for describing the diffusion mechanism were obtained
文摘:討論了擴散遷移與電致遷移共同作用時的擴散機制，導出了可描述這一過程的微分方程 - Consequently , the metal interconnects of vlsi have smaller sectional area and carry increasing power density , which made the electromigration become one of the main latent damage modes
作為vlsi互連線的金屬薄膜的截面積越來越小，其承受的功率密度急劇增加，使得電遷移成為電路的主要失效模式之一。 - Based on the detailed investigation on the correlative fields of home and abroad , it was considered that the noises could be theoretically used to study the electromigration phenomenon
基于對國內外相關技術發(fā)展動態(tài)與現狀的研究與分析，完成了金屬薄膜的電遷移微弱噪聲信號測試系統(tǒng)的設計，并實現了數據的自動采集與處理。 - At last , the model of defect size distribution and the model of soft and hard faults caused by defects is given . electromigration effect is still a dominating failure mechanism of interconnect for deep submicron and ultra - deep submicron scale
然后從實際芯片的缺陷類型中抽象出了丟失物缺陷、冗余物缺陷以及介質針孔缺陷的幾何模型，給出了缺陷的粒徑分布模型和由缺陷引起的軟故障和硬故障的模型。 - In order to improve the circuit performance and reliability , the considerations of increasing influence of parasitic effects resulted from interconnect crosstalk and delay as well as the electromigration and power consumption drive the introduction of copper and low - k dielectric
為了提高電路性能及可靠性，并對連串擾及延遲引起的互連寄生效應影響的增長，電遷徙和功率損耗等方面進行綜合考慮，刺激了低電阻率銅和低介電常數介質的發(fā)展。 - In this thesis , focusing on the copper diffusion failure of copper interconnects in the ulsi , such as electromigration , stressmigration and copper diffusing into silicon dioxide and silicon , the microstructure and the stress of copper interconnects in ulsi have been studied systemically
本論文從ulsi銅互連技術可靠性研究中的銅擴散失效問題出發(fā)，針對電徙動失效、應力遷移失效、層間擴散失效問題，對銅互連線的微觀結構和應力進行了研究。 - Through the electromigration experiment , the electromigration resistance of copper interconnection with different width was compared , its mtf and activated energy was calculated , and the failure mechanism was explored . then , difference between copper interconnection and aluminum interconnection was studied
通過電徙動試驗，研究比較了不同寬度的銅互連線的抗電遷徙能力，計算了其中值壽命和激活能，探討了其失效機理，并與鋁互連線進行了比較。 - Furthermore , the metallizational film level ' s noises measurement system ( hardware and software ) was designed , the automatic data acquisition and analysis have been realized , noises measurement during accelerated life test , namely electromigration process , have been completed , and a lot of valuable data have been gained
通過加速壽命實驗和對樣品的噪聲測量，獲取了樣品電遷移過程不同損傷程度的噪聲數據。對實驗數據和結果做了對比分析，找到了與電遷移相關的噪聲表征參量的變化規(guī)律。
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