Lead lanthanum titanate ( plt ) ferroelectric thin film has superior pyroelectric , ferroelectric , piezoelectric and photoelectric characteristics , and it has been wildly used for various electromic equipments , such as pyroelectric ir detectors , dynamic random access memories ( drams ) and electrooptic apparatus 采用射頻磁控濺射法,分別通過(guò)快速退火和傳統(tǒng)退火工藝,在5英寸的pt / ti / sio2 / si基片上制得具有不同微結(jié)構(gòu)與性能的plt薄膜。
Recently , the n / n + and p / p + epitaxial structures have been applied in the study and production of microwave transistor and ultra - large - scale integrated circuits ( ulsi ) , and the memorial maintain time of dynamic random access memory can be improved , latch - up effect and soft - error induced by a particles can be resolved through the combination of epitaxy and ig 采用這種結(jié)構(gòu)與ig工藝相結(jié)合,能夠大大地提高動(dòng)態(tài)存儲(chǔ)器dram的記憶保持時(shí)間,是解決電路中閂鎖效應(yīng)( latch - up )和粒子引起的軟失效( soft - error )的最佳途徑。