etch method中文是什么意思

發(fā)音:

中文翻譯
造句

侵蝕法
蝕刻法

etch vt. 1.蝕刻，浸蝕。 2.刻劃，描述。 3.銘刻。 ...
method n. 1.方法，方式；順序。 2.(思想、言談上的)條理 ...
deep etch method 深浸蝕法
etch cut method 腐蝕截割法; 腐蝕切割法
etch pits method 腐蝕坑法
etch-pit counting method 蝕刻坑計(jì)數(shù)法
strain etch method 應(yīng)變腐刻法
track etch method 徑跡侵蝕法
etch vt. 1.蝕刻，浸蝕。 2.刻劃，描述。 3.銘刻。 vi. 進(jìn)行蝕刻。 n. 腐蝕劑，蝕刻劑。 mass etch (晶體的)粗蝕。
acid etch 腐蝕厚涂; 浸酸; 酸腐蝕; 酸浸蝕; 酸刻蝕
alkali etch 堿腐蝕
alkaline etch 齡咬
anisotropic etch 蛤異性腐蝕
backside etch 背面蝕刻
buffered etch 緩沖腐蝕劑
carbide etch 碳化物浸蝕
caustic etch 苛性浸蝕
chemical etch 化學(xué)腐蝕
collector etch 集電極腐蝕; 集極腐蝕
deep etch 平凹板; 深浸蝕
deep-etch 深度浸蝕
dip etch 浸蝕法
dry etch 干法刻蝕
electrolytic etch 電解浸蝕
etch angle 蝕痕角

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例句與用法

Poles - etching method is that the etching current caused by the external voltage is used to promote the intermediate ion product break away from the surface of substrate and keep the etching rate stable
電極腐蝕法是指在激光腐蝕的過程中,通過外加電壓在溶液中形成腐蝕電流,促使中間離子產(chǎn)物脫離基片表面,使腐蝕持續(xù)穩(wěn)定進(jìn)行。
Meanwhile , the paper gives a detailed discussion on the coupling principles and also the fabricating processes of these three traditional fiber couplers . the hf etching method to fabricate the coupler is studied
同時(shí),本文還具體介紹了上述三種傳統(tǒng)的光纖耦合器制作方法,即熔融拉錐法、氫氟酸腐蝕法和邊研磨法制作光纖耦合器的原理以及制作工藝。
Directly etching method of chemically forming veined and granular aluminum alloys surface " which is the latest invention patent application number : 00117311 . 1 . the innovative and simple process is absolutely
現(xiàn)在所提供的"鋁合金表面化學(xué)紋理直接蝕刻的方法"發(fā)明專利申請(qǐng): 00117311 . 1是最新發(fā)明專利技術(shù),創(chuàng)新而簡(jiǎn)易的蝕刻工序在"鋁件表面處理"量產(chǎn)時(shí)對(duì)比于傳統(tǒng)的機(jī)械噴沙絕對(duì)是
The testing results shows that the grating has a very well antireflective characteristic , and the values of testing parameters approximately equals to the designed parameters " . it indicates that the plasma - assisted etching method is very valid to fabricate deep grating
測(cè)量結(jié)果發(fā)現(xiàn)該光柵具有良好的增透特性，測(cè)得的光柵參數(shù)和理論設(shè)計(jì)的參數(shù)基本一致，說明等離子體輔助刻蝕是制作深光柵的有效方法。
A varying - temperature etching method for fiber tip preparing was proposed , with which fiber tips with cone angle as large as 35 - 52 degree could be routinely made . to explore the mechanism of varying - temperature method the changing of the diameter of a fiber during etching process was carefully measured and an experiential formula was found . it reveals that the etching rate of fiber keeps constant until the diameter reduces to a certain amount , which explained the large cone angle obtainable with varying - temperature method
在光纖探針制作方面，本論文提出了一種變溫腐蝕制備光纖探針的新方法，獲得了35 52度的大錐角光纖探針；進(jìn)一步對(duì)光纖探針腐蝕成形過程進(jìn)行定量研究，發(fā)現(xiàn)當(dāng)光纖直徑腐蝕減小到一定程度以后，腐蝕速度隨直徑變小而加快；通過對(duì)多次實(shí)驗(yàn)結(jié)果進(jìn)行擬合，得出了光纖直徑隨腐蝕時(shí)間變化的定量經(jīng)驗(yàn)公式；借助該經(jīng)驗(yàn)公式從理論上定量模擬了變溫法獲得大錐角針尖的過程。
The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller . the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method . at the same time , it was observed that the smaller the dimension of the porous silicon , the broader energy gap of the porous silicon
采用脈沖和直流電化學(xué)腐蝕兩種方法制備多孔硅，對(duì)這兩種方法制備的多孔硅樣品進(jìn)行掃描電鏡和熒光光譜的測(cè)量，發(fā)現(xiàn)脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發(fā)光強(qiáng)度大，而且發(fā)光峰位有明顯的藍(lán)移現(xiàn)象。
According to the working principle of thermo - electrode , we demonstrate the structure of enlarged reflection area and the structure of step broaden waveguide to improve the switch ' s performance and bring down the driving power . according to the fabricating condition of our lab , we proposed simple wet - etching method to fabricate the oversized waveguides and peeling - off method to fabricate the electrode
針對(duì)全內(nèi)反射和熱電極的作用特點(diǎn)，在全內(nèi)反射型熱光開關(guān)的設(shè)計(jì)中提出了擴(kuò)大反射區(qū)結(jié)構(gòu)和漸變展寬結(jié)構(gòu)，理論模擬和實(shí)驗(yàn)結(jié)果表明該方法能有效地提高了開關(guān)性能，降低了驅(qū)動(dòng)功率。
The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate . the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film , and the uncovered area is processed by laser induced wet etching
本文的工作就是圍繞半導(dǎo)體gaas基片的激光化學(xué)誘導(dǎo)液相腐蝕技術(shù)開展的,主要的研究結(jié)果和創(chuàng)新之處如下: 1 )提出了激光誘導(dǎo)液相抗蝕膜掩蔽法和電極腐蝕法抗蝕膜掩蔽法是指在基片表面不需要腐蝕的區(qū)域用抗蝕膜覆蓋,激光照射在無抗蝕膜區(qū)域,對(duì)基片進(jìn)行腐蝕。
Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition , improve the etched effect , shorten the etching time and obtain more even etched surface . 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent
2 )提出了激光化學(xué)誘導(dǎo)液相次序選擇腐蝕法該方法適用于腐蝕液為混合溶劑的情況,例如, h2so4 - h2o2對(duì)gaas基片進(jìn)行腐蝕時(shí),先采用h2o2對(duì)基片進(jìn)行氧化腐蝕處理,再利用h2so4進(jìn)行激光化學(xué)腐蝕。
In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last , use high resolution tem and eds to observe and identify the nature of microdefects
發(fā)現(xiàn)幾乎所有高位錯(cuò)密度的si - gaas單晶的表層都具有網(wǎng)絡(luò)狀胞狀結(jié)構(gòu)或系屬結(jié)構(gòu)，首次對(duì)該胞狀結(jié)構(gòu)和系屬結(jié)構(gòu)的形成機(jī)制進(jìn)行了研究；直接觀察微缺陷，配合eds (能量色散譜)鑒定si - gaas中微缺陷的物理本質(zhì)，同時(shí)分析其產(chǎn)生原因，討論與位錯(cuò)的相互作用。

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