反型層的英文

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英文翻譯
造句

inversion layer

反 reverse side
型 mould; model
層 I storey; tier; stratum
電極反型層 electrod inversion layer
反型層電容 inversion capacitance
半導(dǎo)體反型層形成 inversion layer forming
反變層反型層逆溫層逆轉(zhuǎn)層 inversionlayer
反型 anticonfiguration; contratype; inversion; reciprocal form
反型；反向 transoid
調(diào)制反型區(qū) modulated inversion region
反型；反式構(gòu)型 anti-configuration
反型溝道 inversion channel
凹型層理 concave bedding
典型層次詞 basic level terms
分析型層析 analytical chromatography
過渡型層系 transition formation
平板型層流 plate laminar flow
凸型層理 convex bedding
微型層析板 microchromatoplate
全反型視黃醛 alltians-retinol
變元類型層次 hierarchy of argument type
不定型層頂板 random shingle
超薄型層壓板 ultra thin laminate
微型層析管柱 microchromatographic column
反型光致抗蝕劑 inverse photo resist

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例句與用法

And a new numerical charge - sheet model for sic mos inversion layers is presented based on an numerical solution of a one - dimension poisson equation
文中還提出了一個新的sicmosfet反型層薄層電荷數(shù)值模型。
Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well
對6h sic反型層遷移率進(jìn)行的moniecaro模擬結(jié)果表明，庫侖中心的相關(guān)性，庫侖電荷量及電荷中心和sic侶。
A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在輻照的電離效應(yīng)方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。
Firstly , a new interface roughness scattering model is developed using exponential autocovariance functions . the simulation results show that the electron mobility calculated using the exponential model are in good agreement with the experiment data
先推導(dǎo)了一種sic反型層表面粗糙散射的指數(shù)模型，研究證明應(yīng)用此模型能夠更精確地研究sicmos溝道載流子的輸運規(guī)律。
It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明確指出碳化硅器件的反型層遷移率和實驗測定的場效應(yīng)遷移率不能等同，并給出了以上二者的比值與界面態(tài)密度的定量關(guān)系。
Then , a comprehensive an ~ tlyticai model for coulomb scattering in 6h - sic inversion layers is presented considering all the coulomb effects of the charged - centers near the sicisio2 interface . this model takes into account the effects of the charged - centers correlation
當(dāng)有效橫向電場較低時，庫侖散射在sic反型層的電子輸運中起主要散射作用，而當(dāng)有效橫向電場升高時，表面粗糙散射的作用會變得愈來愈顯著。
In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet
本文通過求解自洽薛定諤方程,確定了應(yīng)變硅mosfet反型層的子能帶結(jié)構(gòu),在此基礎(chǔ)上經(jīng)進(jìn)一步計算得到子能帶內(nèi)載流子的有效質(zhì)量和散射幾率,綜合考慮各子能帶上的載流子的濃度分布,建立了應(yīng)變硅mosfet載流子遷移率的解析模型。
In this paper , the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials . the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面質(zhì)量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結(jié)構(gòu)出發(fā)分析了碳化硅材料中雜質(zhì)的不完全離化，采用sicmos反型層薄層電荷數(shù)值模型，研究了雜質(zhì)不完全離化對p型6h - sicmosc - v特性的影響。