器件模擬的英文

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英文翻譯
造句

simulation, device

器件 device; parts of an apparatu ...
模擬 imitate; copy
半導(dǎo)體器件模擬 semiconductor device simulation
軟件模擬 software simulation
事件模擬 event simulation
條件模擬 conditional simulation
硬件模擬層 hel hardware emulation layer
硬件模擬器 hardware simulator
電荷器件模型 charged device model
軟件模擬程序, 軟件模擬器 software simulator
離散事件模擬 discrete event simulation; discrete-events simulation
面向事件模擬 event directed simulation
軟件模擬測(cè)試 software simulator test
軟件模擬程序 software simulator
軟件模擬工具 software simulation tool
書(shū)寫(xiě)文件模擬 clerical file analogy
隨機(jī)事件模擬 simulated of random event
指向事件模擬 event directed simulation
模擬器件 analog device; analogue device
不連續(xù)事件模擬 discrete event simulation
根據(jù)事件模擬法 event-based simulation
后據(jù)事件模擬法 event oriented simulation; event-oriented simulation
監(jiān)控事件模擬系統(tǒng) monitor event simulation system
離散事件模擬程序 discrete event simulation program
異步門元件模擬 simulation of asynchronous gate elements

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例句與用法

The simulation of device and relative experiments are all introduced in the dissertation
本論文的工作主要包括器件模擬和實(shí)驗(yàn)兩部分。
The simulation to the bccd proves that pisces is suitable for the for the ccd simulation
模擬實(shí)例表明器件模擬軟件pisces完全適用于對(duì)ccd的模擬。
Simulation mainly explains the transmission of light after through the surface - textured glass
器件模擬部分主要討論了模擬光通過(guò)刻面玻璃后,光的透過(guò)率情況。
A resistance macromodel for deep - submicron process epi - type substrate based on the 2d device simulation is presented
摘要提出了一種基于二維器件模擬的深亞微米工藝外延型襯底的電阻宏模型。
Abstract : a hybrid algorithm for solving carrier transport equations ofsemiconductor device is presented in this paper
文摘:針對(duì)半導(dǎo)體器件模擬中載流子方程兩種基本算法在高注入條件下的不足，提出了一種混合算法。
Furthermore , its circuit structure is simple and it can be implemented easily in spice program for circuit simulations
此外，該宏模型結(jié)構(gòu)簡(jiǎn)單，可以得到與器件模擬基本一致的模擬結(jié)果，并可以方便地嵌入spice中進(jìn)行一定規(guī)模的電路模擬。
Photoelectric characteristics of sicge / sic heterojunction diode were simulated using medici tools , and the simulation results are presented and discussed in this paper
在本文中，通過(guò)使用二維器件模擬軟件medici ，對(duì)sicge sic異質(zhì)結(jié)的光電特性進(jìn)行了模擬。
In this paper , we apply adi and high - order compact finite difference method for large - scale asymmetric sparse matrix in semiconductor device simulation
摘要采用adi與高階緊致差分相結(jié)合的方法計(jì)算大型非對(duì)稱稀疏矩陣，并實(shí)現(xiàn)了該算法在半導(dǎo)體器件模擬中的應(yīng)用。
It is described that the simulation system is applied in the exploitation of new semiconductor devices , and the advantages are shown if the behavior and process simulation are combined
簡(jiǎn)要闡述了半導(dǎo)體器件模擬軟件在新器件開(kāi)發(fā)中的應(yīng)用，對(duì)性能模擬擴(kuò)展與工藝模擬集成的優(yōu)勢(shì)作了簡(jiǎn)述。
The macromodel is built up with the combination of device simulation and nonlinear curve fit , which makes the extraction of the substrate parasitic parameters more convenient and the circuit simulation more accurate
該宏模型通過(guò)器件模擬與非線性擬合相結(jié)合的方法建立，使襯底寄生參數(shù)的提取更加方便，同時(shí)保障了深亞微米電路特性的模擬精度。