mqw中文是什么意思

發(fā)音:

中文翻譯
造句

多量子阱
激光器均已采用量子阱
量子阱結(jié)構(gòu)

mqw (= multiple quantum well)mqw 多層量子阱
multiple quantum well (mqw) 多層量子阱
mquat 金桔
mqweba 姆克韋巴
mquad metal quad 金屬四列引腳
mqws 多量子阱
mqu mariquita 馬里基塔
mqx makale 默克萊
mqtere mqtlrl 喃喃低語者
mqyq 摩耶
mqt 多量子躍遷; 哈爾濱遠方國際教育交流服務(wù)有限公司; 凱特; 牛奶品質(zhì)測定; 牛奶質(zhì)量測定

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例句與用法

The growth of mqw is summarized
引入了模擬mqw的數(shù)學模型。
7 . the effect of the mqw on the hb - led is analyzed
全面分析多量子阱結(jié)構(gòu)( mqw )在hb - led中的重要作用。
Mqw have the same effect on hb - led as dh , but better than that
Mqw結(jié)構(gòu)比dh結(jié)構(gòu)更加有效的限制載流子，增加輻射復合效率。
Al content will decrease if using mqw even the same emitting wavelength . and it will improve the quality of the crystal
采用mqw結(jié)構(gòu)可以減小相同發(fā)射波長下材料中的鋁組分，從而改善了晶體大的質(zhì)量。
And emission wavelength depends on ratio of well / barrier width more than number of wells . some useful data has been found through experiments
阱壘寬厚度比a較之mqw的周期數(shù)目n對pl發(fā)光波長的影響更大。
Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎(chǔ)的多層量子井發(fā)光二極體結(jié)構(gòu)。
In this dissertation , a novel m - z high speed modulator is proposed , analyzed , fabricated and measured , employing multiple quantum well ( mqw ) structures and traveling wave ( tw ) electrodes to meet the demand of low voltage and wide bandwidth
本論文采用行波量子阱結(jié)構(gòu)來設(shè)計40ghz的電光調(diào)制器。為實現(xiàn)高帶寬，低驅(qū)動的要求，本論文著重在量子阱的光學特性和器件的微波特性兩個方面進行了深入的研究。
Structuring three - level model on basis of two - level model . published before . the circuit model is simulated and some results are gotten by taking account into the same parameters . mqw - ld circuit model designed by grossi is adopted to be illustrated by some solo subcircuits
在已發(fā)表的二層電路模型基礎(chǔ)上提出了三層模型，在所依據(jù)的參數(shù)基本相同的情況下，對模型進行模擬，并對所獲的結(jié)果進行比較討論。
In order to improve the design of mqw structure and the quality of material , gainp / ( alxga1 - x ) inp mqw have been manufactured and analyzed by photoluminescence and raman . great achievements have been obtained . ( 1 ) the theory of photoluminescence of galnp / algalnp mqw was analyzed
本論文主要通過光致發(fā)光和喇曼兩種檢測方法，對gainp ( al _ xga _ ( 1 - x ) ) inpmqw外延片的光學性質(zhì)進行深入的理論分析和實驗研究，以達到改善mqw結(jié)構(gòu)設(shè)計和提高材料生長質(zhì)量的目的。