This decrease in the defect pl intensity is probably caused by the increase of the nonradiative tunneling transition with multiphonon emission because of the increase in the density of si dbs 缺陷pl強(qiáng)度的減小可能是因?yàn)殡S著sidbs密度的增加,與多聲子有關(guān)的,從導(dǎo)帶到懸掛鍵的非輻射通道遷移的增加而引起的。
The investigation of the exciton - phonon coupling of nn3 center offers a direct proof that all the phonon replicas are the phonon sidebands governed by the huang - rhys " multiphonon optical transition theory , and clarifies the speculations that the replicas associated with optical phonons are independent bound states of exciton - phonon complexes or due to other alternative mechanisms 對(duì)其變溫pl譜的研究還發(fā)現(xiàn),在nn :的聲子伴線區(qū)域呈現(xiàn)出的異于多聲子光躍遷理論的現(xiàn)象,說(shuō)明在該區(qū)域可能存在著其它的n雜質(zhì)態(tài)。